Study of GaN-based photonic crystal surface-emitting lasers (PCSELs) with AlN/GaN distributed bragg reflectors

Shih Wei Chen, Tien-chang Lu, Tsung Ting Kao

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

GaN-based 2-D photonic crystal (PC) surface-emitting lasers (PCSELs) with AlN/GaN distributed Bragg reflectors are fabricated and investigated. A clear threshold characteristic under the optical pumping at room temperature is observed at about 2.7 mJ/cm2 with PC lattice constant of 234 nm. Above the threshold, only one dominant peak appears at 401.8 nm with a linewidth of 0.16 nm. The laser emission covers whole circular 2-D PC patterns of 50 μ m in diameter with a small divergence angle. The lasing wavelength emitted from 2-D PC lasers with different lattice constants occurs at the calculated band edges, showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ-K-, and M-directions in the K space. The PCSEL also shows a spontaneous emission coupling factor β of 5× 10-3 and a characteristic temperature of 148 K. Furthermore, the coupled-wave model in 2-D hexagonal lattice is applied to distinguish the discrepancy in threshold power and the corresponding coupling coefficient. The results show that the lasing actions within Γ, K, and M modes have a substantial relation between the threshold energy density and the coupling coefficient.

Original languageEnglish
Article number4787129
Pages (from-to)885-891
Number of pages7
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number3
DOIs
StatePublished - 1 May 2009

Keywords

  • GaN
  • Hexagonal lattice
  • Photonic crystal (PC)
  • Surface-emitting lasers

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