Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application

C. Wang, Y. C. Lin, Chien-Nan Kuo, M. W. Lee, J. N. Yao, T. J. Huang, Heng-Tung Hsu, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D trigate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise Figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.

Original languageEnglish
Title of host publicationEuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages204-207
Number of pages4
ISBN (Electronic)9782874870569
DOIs
StatePublished - Sep 2019
Event14th European Microwave Integrated Circuits Conference, EuMIC 2019 - Paris, France
Duration: 30 Sep 20191 Oct 2019

Publication series

NameEuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference

Conference

Conference14th European Microwave Integrated Circuits Conference, EuMIC 2019
CountryFrance
CityParis
Period30/09/191/10/19

Keywords

  • E-mode
  • InAs HEMT
  • low noise figure
  • tri-gate

Fingerprint Dive into the research topics of 'Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application'. Together they form a unique fingerprint.

Cite this