Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

Ming Ta Hsieh*, Meng Huan Ho, Kuan Heng Lin, Jenn-Fang Chen, Teng-Ming Chen, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.

Original languageEnglish
Article number133310
JournalApplied Physics Letters
Volume96
Issue number13
DOIs
StatePublished - 12 Apr 2010

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