Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Kuan Ning Huang*, Yueh Chin Lin, Jia Ching Lin, Chia Chieh Hsu, Jin Hwa Lee, Chia Hsun Wu, Jing Neng Yao, Heng-Tung Hsu, Venkatesan Nagarajan, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Chao-Hsin Chien, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance–voltage (C–V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal–oxide–semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (Vth) stability and demonstrated only slightly increase in the dynamic on-resistance (Ron) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and ION/IOFF = 107 when tested at VDS = 10 V. Furthermore, low on-resistance of 7.6 Ω mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications.

Original languageEnglish
Pages (from-to)1348-1353
Number of pages6
JournalJournal of Electronic Materials
Volume49
Issue number2
DOIs
StatePublished - Feb 2020

Keywords

  • AlGaN/GaN MIS-HEMT
  • E-mode
  • La-silicate
  • LaO/SiO
  • MOSCAPs

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