Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Chih Chiang Kao, H. W. Huang, J. Y. Tsai, C. C. Yu, C. F. Lin, Hao-Chung Kuo*, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Dry etching of undoped, n-GaN, p-GaN and InGaN laser structure was investigated by inductively coupled plasmas reactive ion etching (ICP-RIE) using Ni mask. As Cl2/Ar gas flow rates were fixed at 10/25sccm, the etched surface roughness has the lowest value of 0.2nm at constant ICP/bias power=300/100W and 5mTorr chamber pressure for undoped GaN. The highest etching rate of 12,000Å/min for n-GaN was achieved at 30mTorr, 300W ICP, 100W bias power using low Cl2 flow rate (Cl2/Ar=10/25 sccm) gas mixtures. The surface roughness was dependent of bias power and chamber pressure, and shows a low root mean square (rms) roughness value of about 1nm at 50W of bias power for n-GaN and p-GaN. For etching of InGaN laser structure using high Cl2 flow rate (Cl2/Ar=50/20sccm) and low chamber pressure 5mTorr, a smooth mirror-like facet of InGaN laser diode structure was obtained. Using these etching parameters, mirror-like facets can be obtained which can be used for the fabrication of nitride-based laser diodes. Moreover, at the fixed Cl2/Ar flow rate of 10/25sccm, ICP/bias power of 200/100W and chamber pressure of 30mTorr, the InGaN-based materials nanorods were fabricated with a density of about 108cm-2 and dimension of 50-100nm.

Original languageEnglish
Pages (from-to)283-288
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume107
Issue number3
DOIs
StatePublished - 25 Mar 2004

Keywords

  • GaN
  • Inductively coupled plasma (ICP)
  • Laser diode
  • Mirror-like facet
  • Nanorods

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