Study of current drive in deep sub-micrometer SOI PMOSFET's

Fariborz Assaderaghi, Kelvin Hui, Stephen Parke, Jon Duster, Ping K. Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Sub-quarter micrometer PMOSFET's are fabricated on SOI films, exhibiting excellent short channel behavior, low sourcedrain resistance, and remarkably large current drive and transconductance. For Tox=5.5nm, saturation transconductances of 270mS/mm at 300K and 350mS/mm at 80K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect, and the reduction of body charge effect.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages232-236
Number of pages5
ISBN (Electronic)0780309782
DOIs
StatePublished - 1 Jan 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

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