Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Ming Chun Tseng; Chi Lu Chen; Nan Kai Lai; Dong Sing Wuu; Hsin Ying Lee; Yu Chang Lin; Ray-Hua Horng

doi:10.1117/12.2079507

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Ming Chun Tseng, Chi Lu Chen, Nan Kai Lai, Dong Sing Wuu, Hsin Ying Lee, Yu Chang Lin, Ray-Hua Horng

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 1/4m. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XIX
Editors	Klaus P. Streubel, Heonsu Jeon, Li-Wei Tu, Martin Strassburg
Publisher	SPIE
ISBN (Electronic)	9781628414738
DOIs	https://doi.org/10.1117/12.2079507
State	Published - 1 Jan 2015
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX - San Francisco, United States Duration: 10 Feb 2015 → 12 Feb 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9383
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
Country	United States
City	San Francisco
Period	10/02/15 → 12/02/15

Keywords

Current spreading layer
P-side up thin-film LED

Access to Document

10.1117/12.2079507

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Tseng, M. C., Chen, C. L., Lai, N. K., Wuu, D. S., Lee, H. Y., Lin, Y. C., & Horng, R-H. (2015). Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD. In K. P. Streubel, H. Jeon, L-W. Tu, & M. Strassburg (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX [93830D] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9383). SPIE. https://doi.org/10.1117/12.2079507

Tseng, Ming Chun ; Chen, Chi Lu ; Lai, Nan Kai ; Wuu, Dong Sing ; Lee, Hsin Ying ; Lin, Yu Chang ; Horng, Ray-Hua. / Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. editor / Klaus P. Streubel ; Heonsu Jeon ; Li-Wei Tu ; Martin Strassburg. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD",

abstract = "A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 1/4m. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.",

keywords = "Current spreading layer, P-side up thin-film LED",

author = "Tseng, {Ming Chun} and Chen, {Chi Lu} and Lai, {Nan Kai} and Wuu, {Dong Sing} and Lee, {Hsin Ying} and Lin, {Yu Chang} and Ray-Hua Horng",

year = "2015",

month = jan,

day = "1",

doi = "10.1117/12.2079507",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Streubel, {Klaus P.} and Heonsu Jeon and Li-Wei Tu and Martin Strassburg",

booktitle = "Light-Emitting Diodes",

address = "United States",

note = "null ; Conference date: 10-02-2015 Through 12-02-2015",

}

Tseng, MC, Chen, CL, Lai, NK, Wuu, DS, Lee, HY, Lin, YC & Horng, R-H 2015, Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD. in KP Streubel, H Jeon, L-W Tu & M Strassburg (eds), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX., 93830D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9383, SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, San Francisco, United States, 10/02/15. https://doi.org/10.1117/12.2079507

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD. / Tseng, Ming Chun; Chen, Chi Lu; Lai, Nan Kai; Wuu, Dong Sing; Lee, Hsin Ying; Lin, Yu Chang; Horng, Ray-Hua.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. ed. / Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg. SPIE, 2015. 93830D (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9383).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tseng, Ming Chun

AU - Chen, Chi Lu

AU - Lai, Nan Kai

AU - Wuu, Dong Sing

AU - Lee, Hsin Ying

AU - Lin, Yu Chang

AU - Horng, Ray-Hua

PY - 2015/1/1

Y1 - 2015/1/1

N2 - A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 1/4m. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.

AB - A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 1/4m. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.

KW - Current spreading layer

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Diodes

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A2 - Jeon, Heonsu

A2 - Tu, Li-Wei

A2 - Strassburg, Martin

PB - SPIE

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Tseng MC, Chen CL, Lai NK, Wuu DS, Lee HY, Lin YC et al. Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD. In Streubel KP, Jeon H, Tu L-W, Strassburg M, editors, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. SPIE. 2015. 93830D. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2079507