Studies of oxide to polymer bonding for 3D IC

S. L. Lin*, W. C. Huang, Kuan-Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The two bonds important in BCB bonding are discussed. According to the principles of silicon oxide bonding and the nature of these two bonds, we established the most likely mechanism for BCB to oxide bonding. We compare BCB to PECVD oxide bonding with BCB to thermal oxide bonding and investigate the difference in bonding strength. We also observe the BCB surface changes before and after bonding.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Fingerprint Dive into the research topics of 'Studies of oxide to polymer bonding for 3D IC'. Together they form a unique fingerprint.

Cite this