The two bonds important in BCB bonding are discussed. According to the principles of silicon oxide bonding and the nature of these two bonds, we established the most likely mechanism for BCB to oxide bonding. We compare BCB to PECVD oxide bonding with BCB to thermal oxide bonding and investigate the difference in bonding strength. We also observe the BCB surface changes before and after bonding.
|Title of host publication||4th IEEE International NanoElectronics Conference, INEC 2011|
|State||Published - 26 Sep 2011|
|Event||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan|
Duration: 21 Jun 2011 → 24 Jun 2011
|Name||Proceedings - International NanoElectronics Conference, INEC|
|Conference||4th IEEE International Nanoelectronics Conference, INEC 2011|
|Period||21/06/11 → 24/06/11|