Structure effects on electron-optical phonon interaction in GaAs/Al xGa 1-xAs quantum wells

H. C. Lee*, Kien-Wen Sun, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Based on the dielectric continuum model, we have studied the electron-optical phonon scattering rates in GaAs/Al xGa 1-xAs quantum wells with different structure parameters. It was found that the scattering rate of the symmetric interface phonon mode has a stronger dependence on the Al composition in the barriers than that of the confined mode. The effective phonon energy emitted by hot electrons in GaAs/Al xGa 1-xAs quantum wells with various Al compositions was estimated and the calculated value agrees with the experimental results qualitatively. For the dependence on the well width, scattering rates of the S+ mode drop considerably as the well width is increased. The dependence of the electron-optical phonon interaction on structure parameters can be clearly explained by the H and G factors defined in the article.

Original languageEnglish
Pages (from-to)268-273
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number1
DOIs
StatePublished - 1 Jul 2002

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