Structure effect of cylindrical-shaped gesbte alloy on phase transition in phase change memory

Yiming Li*, Chih Hong Hwang, Yi Ting Kuo, Hui Wen Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Novel chalcogenide-based phase change memories (PCMs) are known as one of next-generation non-volatile memory technologies for its high resistance contrast, better endurance and high writing speed. PCM cell stores data by a thermally induced phase transition between crystalline to amorphous states, and thus understanding of temperature distributes within a cell and determining the programming current of phase transition are crucial in design and technology of PCM. In this study, a three-dimensional electro-thermal time-domain simulation is conducted for dynamic analysis of the cylindrical-shaped PCMs. The structure GST is a cone with different cone angle, ranging from 90° to 45°. The relation between contact size of nanoscale GeSbTe (GST) alloy and the required programming current for phase transition is advanced. The preliminary result shows that the GST structure with a 90° angle exhibits the smallest required programming current, the fastest phase transition characteristic, the highest resistance contrast, and the best heat utilization efficiency. This study quantitatively estimates the structure effect on phase transition of PCM and physically provides an insight into design and technology of PCMs.

Original languageEnglish
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages350-353
Number of pages4
DOIs
StatePublished - 2008
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: 18 Aug 200821 Aug 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
CountryUnited States
CityArlington, TX
Period18/08/0821/08/08

Keywords

  • Electro-thermal time-domain simulation
  • Non-volatile memor
  • Phase change memory
  • Structure effect

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