Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

Pei Yin Lin*, Jr Yu Chen, Yi Sen Shih, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.

Original languageEnglish
Article number628
Pages (from-to)1-4
Number of pages4
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
StatePublished - 1 Jan 2014

Keywords

  • AlInN
  • Epitaxy
  • GaN
  • Metal-organic chemical vapor deposition

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