Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

Pei Yin Lin; Jr Yu Chen; Yi Sen Shih; Li Chang

doi:10.1186/1556-276X-9-628

Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

Pei Yin Lin^*, Jr Yu Chen, Yi Sen Shih, Li Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.

Original language	English
Article number	628
Pages (from-to)	1-4
Number of pages	4
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-628
State	Published - 1 Jan 2014

Keywords

AlInN
Epitaxy
GaN
Metal-organic chemical vapor deposition

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title = "Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition",

abstract = "The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.",

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AU - Lin, Pei Yin

AU - Chen, Jr Yu

AU - Shih, Yi Sen

AU - Chang, Li

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.

AB - The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.

KW - AlInN

KW - Epitaxy

KW - GaN

KW - Metal-organic chemical vapor deposition

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SN - 1931-7573

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ER -

Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

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Keywords

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