Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

Nidhi Tiwari*, Han Ping D. Shieh, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Abstract Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 °C reveal smaller sub-threshold swing (SS∼0.52 V/dec) and threshold voltage (V th ∼1.3 V) than the TFTs (SS∼0.82 V/dec, V th ∼13.3 V) of a-IGZO thin film annealed at the same temperature.

Original languageEnglish
Article number18635
Pages (from-to)53-56
Number of pages4
JournalMaterials Letters
Volume151
DOIs
StatePublished - 15 Jul 2015

Keywords

  • Semiconductor
  • Sputtering
  • Thin films

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