Structural evolution in Ge + implantation amorphous Si

J. H. He, Wen-Wei Wu, H. H. Lin, S. L. Cheng, Y. L. Chueh, L. J. Chou, L. J. Chen*

*Corresponding author for this work

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The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.

Original languageEnglish
Pages (from-to)325-328
Number of pages4
JournalApplied Surface Science
Issue numberSPEC.
StatePublished - 15 May 2003


  • Auto-correlation function
  • High-resolution TEM
  • Ion implantation
  • Nanocrystallite
  • Preamorphization

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    He, J. H., Wu, W-W., Lin, H. H., Cheng, S. L., Chueh, Y. L., Chou, L. J., & Chen, L. J. (2003). Structural evolution in Ge + implantation amorphous Si. Applied Surface Science, 212-213(SPEC.), 325-328.