Structural Effect on Band- Trap- Band Tunneling Induced Drain Leakage in n-MOSFET‘s

Ta-Hui Wang, T. E. Chang, J. Y. Yang, Kow-Ming Chang, L. Chiang, C. M. Huang

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D DDD, and LDD n-MOSFET structures. The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number12
DOIs
StatePublished - 1 Jan 1995

Fingerprint Dive into the research topics of 'Structural Effect on Band- Trap- Band Tunneling Induced Drain Leakage in n-MOSFET‘s'. Together they form a unique fingerprint.

Cite this