Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang, Po-Tsun Liu, T. S. Chang, T. C. Chang, L. J. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

Original languageEnglish
Pages (from-to)393-397
Number of pages5
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
StatePublished - 22 Dec 2004

Keywords

  • Copper suicide
  • Dielectric constant
  • Porous polysilazane

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