Structural and optoelectronic properties of GZO/SiO x bilayer films by atmosphere pressure plasma jet

Kow-Ming Chang*, Po Ching Ho, Chi Wei Wu, Chin Jyi Wu, Chia Chiang Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00×10 -4 was achieved at 8 at% gallium doping. X-ray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages221-229
Number of pages9
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

Fingerprint Dive into the research topics of 'Structural and optoelectronic properties of GZO/SiO <sub>x</sub> bilayer films by atmosphere pressure plasma jet'. Together they form a unique fingerprint.

Cite this