Structural and optoelectronic properties of GZO/SiO x bilayer films by atmosphere pressure plasma jet

Kow-Ming Chang; Po Ching Ho; Chi Wei Wu; Chin Jyi Wu; Chia Chiang Chang

doi:10.1149/1.3701542

Structural and optoelectronic properties of GZO/SiO _x bilayer films by atmosphere pressure plasma jet

Kow-Ming Chang^*, Po Ching Ho, Chi Wei Wu, Chin Jyi Wu, Chia Chiang Chang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00×10 ^-4 was achieved at 8 at% gallium doping. X-ray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 13
Pages	221-229
Number of pages	9
Edition	7
DOIs	https://doi.org/10.1149/1.3701542
State	Published - 19 Nov 2012
Event	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	7
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

Access to Document

10.1149/1.3701542

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Structural and optoelectronic properties of GZO/SiO <sub>x</sub> bilayer films by atmosphere pressure plasma jet'. Together they form a unique fingerprint.

Cite this

@inproceedings{a3cf9c296054401fba6818ae78430ac3,

title = "Structural and optoelectronic properties of GZO/SiO x bilayer films by atmosphere pressure plasma jet",

abstract = "Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00×10 -4 was achieved at 8 at% gallium doping. X-ray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.",

author = "Kow-Ming Chang and Ho, {Po Ching} and Wu, {Chi Wei} and Wu, {Chin Jyi} and Chang, {Chia Chiang}",

year = "2012",

month = nov,

day = "19",

doi = "10.1149/1.3701542",

language = "English",

isbn = "9781566779593",

series = "ECS Transactions",

number = "7",

pages = "221--229",

booktitle = "Wide-Bandgap Semiconductor Materials and Devices 13",

edition = "7",

note = "null ; Conference date: 06-05-2012 Through 10-05-2012",

}

Chang, K-M, Ho, PC, Wu, CW, Wu, CJ & Chang, CC 2012, Structural and optoelectronic properties of GZO/SiO _x bilayer films by atmosphere pressure plasma jet. in Wide-Bandgap Semiconductor Materials and Devices 13. 7 edn, ECS Transactions, no. 7, vol. 45, pp. 221-229, 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/1.3701542

Structural and optoelectronic properties of GZO/SiO _x bilayer films by atmosphere pressure plasma jet. / Chang, Kow-Ming; Ho, Po Ching; Wu, Chi Wei; Wu, Chin Jyi; Chang, Chia Chiang.

Wide-Bandgap Semiconductor Materials and Devices 13. 7. ed. 2012. p. 221-229 (ECS Transactions; Vol. 45, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural and optoelectronic properties of GZO/SiO x bilayer films by atmosphere pressure plasma jet

AU - Chang, Kow-Ming

AU - Ho, Po Ching

AU - Wu, Chi Wei

AU - Wu, Chin Jyi

AU - Chang, Chia Chiang

PY - 2012/11/19

Y1 - 2012/11/19

N2 - Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00×10 -4 was achieved at 8 at% gallium doping. X-ray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.

AB - Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00×10 -4 was achieved at 8 at% gallium doping. X-ray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.

UR - http://www.scopus.com/inward/record.url?scp=84869005240&partnerID=8YFLogxK

U2 - 10.1149/1.3701542

DO - 10.1149/1.3701542

M3 - Conference contribution

AN - SCOPUS:84869005240

SN - 9781566779593

T3 - ECS Transactions

SP - 221

EP - 229

BT - Wide-Bandgap Semiconductor Materials and Devices 13

Y2 - 6 May 2012 through 10 May 2012

ER -