Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

Wen-Hao Chang*, Lin Lee, Ching Yu Chen, Wen Che Tsai, Hsuan Lin, Wu-Ching Chou, Ming Chih Lee, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

InN nanodots grown on GaN by metalorganic chemical vapor deposition (MOCVD) using conventional growth mode as well as flow-rate modulation epitaxy (FME) at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN dots and their photoluminescence (PL) properties. The best growth efficiency of InN was achieved by FME at around 650 °C. The residual carrier concentration and PL efficiency was also be improved when a high growth temperature was used. Our results indicated that InN nanodots can be grown at a temperature even higher than 700 °C while maintain their optical quality.

Original languageEnglish
Pages (from-to)3014-3016
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
StatePublished - Jul 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 15 Oct 200718 Oct 2007

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