Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu, Li Chang, P. Y. Lin, C. H. Chiang, Jenn-Fang Chen, T. W. Chi

Research output: Contribution to journalArticle

Abstract

In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

Original languageEnglish
Article number185106
JournalJournal of Physics D: Applied Physics
Volume42
Issue number18
DOIs
StatePublished - 18 Sep 2009

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