Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo*, C. L. Wu, C. H. Shen, Wen-Hao Chang, T. M. Hsu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

Original languageEnglish
Pages259-267
Number of pages9
StatePublished - 28 Oct 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 9 May 200414 May 2004

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period9/05/0414/05/04

Keywords

  • Indium Nitride (InN)
  • Near-Infrared Photoluminescence (PL)
  • Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE)
  • Silicon (Si)

Fingerprint Dive into the research topics of 'Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy'. Together they form a unique fingerprint.

Cite this