Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo; C. L. Wu; C. H. Shen; Wen-Hao Chang; T. M. Hsu

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo^*, C. L. Wu, C. H. Shen, Wen-Hao Chang, T. M. Hsu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

Abstract

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

Original language	English
Pages	259-267
Number of pages	9
State	Published - 28 Oct 2004
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country	United States
City	San Antonio, TX
Period	9/05/04 → 14/05/04

Keywords

Indium Nitride (InN)
Near-Infrared Photoluminescence (PL)
Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE)
Silicon (Si)

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Gwo, S., Wu, C. L., Shen, C. H., Chang, W-H., & Hsu, T. M. (2004). Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. 259-267. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Gwo, S. ; Wu, C. L. ; Shen, C. H. ; Chang, Wen-Hao ; Hsu, T. M. / Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.9 p.

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title = "Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy",

abstract = "Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.",

keywords = "Indium Nitride (InN), Near-Infrared Photoluminescence (PL), Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE), Silicon (Si)",

author = "S. Gwo and Wu, {C. L.} and Shen, {C. H.} and Wen-Hao Chang and Hsu, {T. M.}",

year = "2004",

month = oct,

day = "28",

language = "English",

pages = "259--267",

note = "null ; Conference date: 09-05-2004 Through 14-05-2004",

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Gwo, S, Wu, CL, Shen, CH, Chang, W-H & Hsu, TM 2004, 'Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 9/05/04 - 14/05/04 pp. 259-267.

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. / Gwo, S.; Wu, C. L.; Shen, C. H.; Chang, Wen-Hao; Hsu, T. M.

2004. 259-267 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, Wen-Hao

AU - Hsu, T. M.

PY - 2004/10/28

Y1 - 2004/10/28

N2 - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

AB - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

KW - Indium Nitride (InN)

KW - Near-Infrared Photoluminescence (PL)

KW - Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE)

KW - Silicon (Si)

UR - http://www.scopus.com/inward/record.url?scp=5744220665&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744220665

SP - 259

EP - 267

Y2 - 9 May 2004 through 14 May 2004

ER -

Gwo S, Wu CL, Shen CH, Chang W-H, Hsu TM. Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

Abstract

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