Abstract
Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.
Original language | English |
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Pages | 259-267 |
Number of pages | 9 |
State | Published - 28 Oct 2004 |
Event | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004 |
Conference
Conference | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium |
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Country | United States |
City | San Antonio, TX |
Period | 9/05/04 → 14/05/04 |
Keywords
- Indium Nitride (InN)
- Near-Infrared Photoluminescence (PL)
- Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE)
- Silicon (Si)