Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen; Hsiao-Hsuan Hsu; Ping Chiou; Chun-Hu Cheng; Chien-Hung Tung; Chien Yu Lai; Hung Wei Li; Chih Pang Chang; Hsueh Hsing Lu; Ching Sang Chuang; Yu Hsin Lin; Chun-Yen Chang

doi:10.7567/JJAP.54.04DF05

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen, Hsiao-Hsuan Hsu, Ping Chiou, Chun-Hu Cheng, Chien-Hung Tung, Chien Yu Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin, Chun-Yen Chang

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics

Original language	English
Journal	Japanese Journal of Applied Physics
DOIs	https://doi.org/10.7567/JJAP.54.04DF05
State	Published - Apr 2015

Keywords

GATE DIELECTRICS

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Yen, Shiang Shiou ; Hsu, Hsiao-Hsuan ; Chiou, Ping ; Cheng, Chun-Hu ; Tung, Chien-Hung ; Lai, Chien Yu ; Li, Hung Wei ; Chang, Chih Pang ; Lu, Hsueh Hsing ; Chuang, Ching Sang ; Lin, Yu Hsin ; Chang, Chun-Yen. / Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel. In: Japanese Journal of Applied Physics. 2015.

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title = "Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel",

abstract = "In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics",

keywords = "GATE DIELECTRICS",

author = "Yen, {Shiang Shiou} and Hsiao-Hsuan Hsu and Ping Chiou and Chun-Hu Cheng and Chien-Hung Tung and Lai, {Chien Yu} and Li, {Hung Wei} and Chang, {Chih Pang} and Lu, {Hsueh Hsing} and Chuang, {Ching Sang} and Lin, {Yu Hsin} and Chun-Yen Chang",

year = "2015",

month = apr,

doi = "10.7567/JJAP.54.04DF05",

language = "English",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel. / Yen, Shiang Shiou; Hsu, Hsiao-Hsuan; Chiou, Ping; Cheng, Chun-Hu; Tung, Chien-Hung; Lai, Chien Yu; Li, Hung Wei; Chang, Chih Pang; Lu, Hsueh Hsing; Chuang, Ching Sang; Lin, Yu Hsin; Chang, Chun-Yen.

In: Japanese Journal of Applied Physics, 04.2015.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

AU - Yen, Shiang Shiou

AU - Hsu, Hsiao-Hsuan

AU - Chiou, Ping

AU - Cheng, Chun-Hu

AU - Tung, Chien-Hung

AU - Lai, Chien Yu

AU - Li, Hung Wei

AU - Chang, Chih Pang

AU - Lu, Hsueh Hsing

AU - Chuang, Ching Sang

AU - Lin, Yu Hsin

AU - Chang, Chun-Yen

PY - 2015/4

Y1 - 2015/4

N2 - In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics

AB - In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics

KW - GATE DIELECTRICS

U2 - 10.7567/JJAP.54.04DF05

DO - 10.7567/JJAP.54.04DF05

M3 - Article

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

ER -