Structural and dielectric properties of Ba0.85Sr 0.15(Zr0.18Ti0.85)O3 thin films grown by a sol-gel process

Jiwei Zhai*, Xi Yao, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations


The Ba0.85Sr0.15Zr0.18Ti 0.82O3 (BSZT) thin films were deposited via sol-gel process on LaNiO3-coated silicon substrates. The grain size decreased and the microstructure became dense when substitute Zr for Ti. Dielectric properties were investigated as a function of temperature, frequency and direct current electric field. The temperature dependent dielectric measurements revealed that the thin films have diffuse phase transition characteristics. The tunability of Ba0.8Sr0.2Sn0.10Ti 0.90O3 thin films is about 57%, at an applied field of 415kV/cm and measurement frequency of 1MHz. It was observed that the leakage current density of Ba0.85Sr0.15Zr0.18Ti 0.82O3 is higher than that of BZT thin films.

Original languageEnglish
Pages (from-to)1237-1240
Number of pages4
JournalCeramics International
Issue number7
StatePublished - 7 Sep 2004
Event3rd Asian Meeting on Electroceramics - Singapore, Singapore
Duration: 7 Dec 200311 Dec 2003


  • B. Microstructure
  • BSZT thin film
  • C. Dielectric properties
  • Phase transition

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