Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO2 system

Wei Ming Liao; Wei Ting Lai; Pei-Wen Li; Ming Ting Kuo; P. S. Chen; M. J. Tsai

doi:10.1109/NANO.2005.1500823

Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO₂ system

Wei Ming Liao^*, Wei Ting Lai, Pei-Wen Li, Ming Ting Kuo, P. S. Chen, M. J. Tsai

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO₂ system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	737-740
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2005.1500823
State	Published - 1 Dec 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country	Japan
City	Nagoya
Period	11/07/05 → 15/07/05

Keywords

Coulomb blockade
Germanium
Quantum confinement
Quantum dots
Single electron transistors

Access to Document

10.1109/NANO.2005.1500823

Link to publication in Scopus

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Liao, W. M., Lai, W. T., Li, P-W., Kuo, M. T., Chen, P. S., & Tsai, M. J. (2005). Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO₂ system. In 2005 5th IEEE Conference on Nanotechnology (pp. 737-740). [1500823] (2005 5th IEEE Conference on Nanotechnology; Vol. 2). https://doi.org/10.1109/NANO.2005.1500823

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title = "Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO2 system",

abstract = "We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO2 system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.",

keywords = "Coulomb blockade, Germanium, Quantum confinement, Quantum dots, Single electron transistors",

author = "Liao, {Wei Ming} and Lai, {Wei Ting} and Pei-Wen Li and Kuo, {Ming Ting} and Chen, {P. S.} and Tsai, {M. J.}",

year = "2005",

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doi = "10.1109/NANO.2005.1500823",

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Liao, WM, Lai, WT, Li, P-W, Kuo, MT, Chen, PS & Tsai, MJ 2005, Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO₂ system. in 2005 5th IEEE Conference on Nanotechnology., 1500823, 2005 5th IEEE Conference on Nanotechnology, vol. 2, pp. 737-740, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 11/07/05. https://doi.org/10.1109/NANO.2005.1500823

Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO₂ system. / Liao, Wei Ming; Lai, Wei Ting; Li, Pei-Wen; Kuo, Ming Ting; Chen, P. S.; Tsai, M. J.

2005 5th IEEE Conference on Nanotechnology. 2005. p. 737-740 1500823 (2005 5th IEEE Conference on Nanotechnology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO2 system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.

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