Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO2 system

Wei Ming Liao*, Wei Ting Lai, Pei-Wen Li, Ming Ting Kuo, P. S. Chen, M. J. Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO2 system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages737-740
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Coulomb blockade
  • Germanium
  • Quantum confinement
  • Quantum dots
  • Single electron transistors

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    Liao, W. M., Lai, W. T., Li, P-W., Kuo, M. T., Chen, P. S., & Tsai, M. J. (2005). Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO2 system. In 2005 5th IEEE Conference on Nanotechnology (pp. 737-740). [1500823] (2005 5th IEEE Conference on Nanotechnology; Vol. 2). https://doi.org/10.1109/NANO.2005.1500823