@inproceedings{cbf546a34b83423b814227761581ec09,
title = "Strong quantum confinement and Coulomb blockade effects in Ge quantum dots/SiO2 system",
abstract = "We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO2 system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.",
keywords = "Coulomb blockade, Germanium, Quantum confinement, Quantum dots, Single electron transistors",
author = "Liao, {Wei Ming} and Lai, {Wei Ting} and Pei-Wen Li and Kuo, {Ming Ting} and Chen, {P. S.} and Tsai, {M. J.}",
year = "2005",
month = dec,
day = "1",
doi = "10.1109/NANO.2005.1500823",
language = "English",
isbn = "0780391993",
series = "2005 5th IEEE Conference on Nanotechnology",
pages = "737--740",
booktitle = "2005 5th IEEE Conference on Nanotechnology",
note = "null ; Conference date: 11-07-2005 Through 15-07-2005",
}