Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment

Tin Yu Ko, Yu Lin Liu, Kien-Wen Sun*, Yi Jie Lin, Shih Chieh Fong, I. Nan Lin, Nyan Hwa Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalDiamond and Related Materials
Volume35
DOIs
StatePublished - 22 Apr 2013

Keywords

  • Color center
  • Nitrogen vacancy
  • Photoluminescence
  • Plasma
  • Ultrananocrystalline diamond

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