Strong luminescence intensities in Al _0.22 Ga _0.78 As grown on misoriented (111)B GaAs

Strong enhancement in the luminescence intensity is observed in Al _0.22 Ga _0.78 As epitaxial layers grown on misoriented (111)B GaAs at 630°C. For 3°misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al _0.4 Ga _0.6 As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm ² are indications of excellent AlGaAs material quality. Electron mobility for 3°misoriented (111) Al _0.25 Ga _0.75 As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.