Strong enhancement in the luminescence intensity is observed in Al 0.22 Ga 0.78 As epitaxial layers grown on misoriented (111)B GaAs at 630°C. For 3°misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al 0.4 Ga 0.6 As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm 2 are indications of excellent AlGaAs material quality. Electron mobility for 3°misoriented (111) Al 0.25 Ga 0.75 As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.