Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi, Xin Nan Chenl, Jyehong Chen, J. E. Bowers, Ying Jay Yang, Jin Wei Shi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
StatePublished - 2 Dec 2016
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 12 Sep 201615 Sep 2016

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period12/09/1615/09/16

Fingerprint Dive into the research topics of 'Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs'. Together they form a unique fingerprint.

  • Cite this

    Chi, K. L., Chenl, X. N., Chen, J., Bowers, J. E., Yang, Y. J., & Shi, J. W. (2016). Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. In 2016 International Semiconductor Laser Conference, ISLC 2016 [7765750] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..