Strong enhancement in the luminescence intensity is observed in Al0.22Ga0.78As epitaxial layers grown on misoriented (111)B GaAs as compared to those simultaneously grown on (100) GaAs. For a 1° misorientation the luminescence intensity is almost 10 to 1000 times that of the (100) layers, depending on the growth temperature. Room temperature electron mobility for 3° misoriented (111)B Al0.18Ga0.82As is 19% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV and the 19% mobility enhancement are related to the long range composition ordering in (111)B AlGaAs, which is observed by cross-sectional transmission electron microscopy in a 280 Å Al0.4GaAs quantum well heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Issue number||1 -4 pt 1|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 8th International Conference on Molecular Beam Epitaxy. Part 1 (of 2) - Osaka, Jpn|
Duration: 29 Aug 1994 → 2 Sep 1994