Strong and efficient light emission in ITO/Al2O3 superlattice tunnel diode

Albert Chin*, C. S. Liang, C. Y. Lin, C. C. Wu, J. Liu

*Corresponding author for this work

Research output: Contribution to journalConference article

10 Scopus citations

Abstract

We have studied the electroluminescence of ITO/Al2O3 superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20Å SiO2 tunnel diode and 0.18μm MOSFET. Besides the small 3V operation and low power consumption, good reliability is another merit for this device.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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