We have studied the electroluminescence of ITO/Al2O3 superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20Å SiO2 tunnel diode and 0.18μm MOSFET. Besides the small 3V operation and low power consumption, good reliability is another merit for this device.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2 Dec 2001 → 5 Dec 2001