Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy

T. M. Cheng*, Albert Chin, C. Y. Chang, M. F. Huang, K. Y. Hsieh, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Low temperature InGaAs strained quantum wells have been grown by molecular beam epitaxy and annealed at 600-900°C for 10 min. For an optimized annealing condition, arsenic precipitates can be successfully confined in the InGaAs wells and completely depleted in the GaAs barriers. The strong accumulation of As precipitates shows that the phenomena are not due to the strain effect but may be explained by the difference of interfacial energy between precipitate and matrix. The ability to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.

Original languageEnglish
Pages (from-to)1546-1548
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number12
DOIs
StatePublished - 1 Dec 1994

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