Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

J. C. Fan*, K. Y. Chen, Kuo-Jui Lin, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.

Original languageEnglish
Pages (from-to)1095-1096
Number of pages2
JournalElectronics Letters
Volume33
Issue number12
DOIs
StatePublished - 5 Jun 1997

Keywords

  • Epitaxial lift-off
  • Semiconductor junction lasers

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