Stretched contact printing of one-dimensional nanostructures for hybrid inorganic-organic field effect transistors

Chien-Wen Hsieh*, Jinjin Wang, Ken Ogata, John Robertson, Stephan Hofmann, William I. Milne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We demonstrate a stretched contact printing technique to assemble one-dimensional nanostructures with controlled density and orientation from either dry or wet sources. The random, chaotically arranged nanostructures can gradually transform to a highly aligned configuration. Our results show that up to 90% of the printed nanowires are aligned within ±15° of the primary stretching direction. This approach is easily applicable to a variety of nanowires and nanotubes on different substrates, and we demonstrate various field effect transistors with nanowire and hybrid nanowire-polymer networks. The hybrid inorganic-organic transistors based on a parallel aligned nanowire network and a semiconducting polymer revealed a significant enhancement in transistor mobility, a 10-fold reduction in subthreshold slope (∼0.26 V decade-1), and superior air stability compared to a pristine polymer host.

Original languageEnglish
Pages (from-to)7118-7125
Number of pages8
JournalJournal of Physical Chemistry C
Volume116
Issue number12
DOIs
StatePublished - 29 Mar 2012

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