Stress-Induced Oxide Leakage

Reza Rofan, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

125 Scopus citations

Abstract

Voltage-stress-induced leakage in S-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap-assisted tunneling.

Original languageEnglish
Pages (from-to)632-634
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number11
DOIs
StatePublished - 1 Jan 1991

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