Stress-Induced gate Leakage Current (SILC) was used to evaluate plasma-processes induced damage to ultra-thin gate oxide transistors. Even though the leakage currents increase as the oxide thickness decreases, the reliability of ultra-thin gate oxide, 2.2 nm, is superior to the thicker oxides. No SILC was observed for the thinnest films, while thicker oxides show large SILC variation due to process-induced charging damage. The effect of different gate poly-Si etching processes in a high density TCP plasma system were also evaluated. Only the gate that was etched with an abnormally high bias power over etch process, and connected to large connection antenna ratio shows SILC.
|Number of pages||4|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA|
Duration: 4 Jun 1998 → 5 Jun 1998
|Conference||Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID|
|City||Honolulu, HI, USA|
|Period||4/06/98 → 5/06/98|