Stress-induced current in thin silicon dioxide films

R. Moazzami, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

205 Scopus citations

Abstract

Low-field current following Fowler-Nordheim stress of thin gate oxides is studied. The conduction mechanism is attributed to trap-assisted tunneling of electrons. For oxides thicker than 100 AA, this stress-induced current is observed to decay as traps are filled without significant tunneling out of traps. In thinner oxides, steady-state current flows when there is an equilibrium between trap filling and emptying processes. This model is observed to be consistent with stress-induced current behavior in a wide range of oxide thicknesses (60 AA to 130 AA) and process technologies.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages139-142
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1 Jan 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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