Stress evolution due to electromigration in confined metal lines

M. A. Korhonen*, P. Borgesen, King-Ning Tu, Che Yu Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

518 Scopus citations

Abstract

Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.

Original languageEnglish
Pages (from-to)3790-3799
Number of pages10
JournalJournal of Applied Physics
Volume73
Issue number8
DOIs
StatePublished - 1 Dec 1993

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