In this brief, shallow-trench-isolation (STI) stress buffer techniques, including sidewall stress buffer and channel surface buffer layers, are developed to reduce the impact of compressive STI stress on the mobility of advanced n-type MOS (NMOS) devices. Our investigation shows that a 7% driving current gain at an NMOS device has been achieved, whereas no degradation at a p-type MOS (PMOS) device was observed. The same junction leakage at both the NMOS and PMOS devices was maintained. A stress relaxation model with simulation is thus proposed to account for the enhanced transport characteristics.
- Channel surface buffer layer
- MOS devices
- Shallow-trench isolation (STI)
- Sidewall stress buffer layer
- Transport characteristics