Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO 3 thin films

H. W. Jang; S. H. Baek; D. Ortiz; C. M. Folkman; R. R. Das; Ying-hao Chu; J. X. Zhang; V. Vaithyanathan; S. Choudhury; Y. B. Chen; X. Q. Pan; D. G. Schlom; L. Q. Chen; R. Ramesh; C. B. Eom

doi:10.1109/ISAF.2008.4693773

Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, R. R. Das, Ying-hao Chu, J. X. Zhang, V. Vaithyanathan, S. Choudhury, Y. B. Chen, X. Q. Pan, D. G. Schlom, L. Q. Chen, R. Ramesh, C. B. Eom

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the strain dependence of remanent polarization and coercive field of epitaxial (001) _p BiFeO ₃ films. Our measurements reveal that the large spontanoues polarization of BiFeO ₃ is indeed intrinsic, the remanent polarization of (001) _p BiFeO ₃ thin films has a strong strain dependence, even stronger than (001) PbTiO ₃ films, and the coercive field of BiFeO ₃ films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) _p BiFeO ₃ membranes allows us to achieve a fatigue-free switching behavior to 10 ¹⁰ cycles. This experimental result strongly suggests that epitaxial (001) _p BiFeO ₃ thin films are very promising materials for non-volatile memories and magnetoelectric devices.

Original language	English
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693773
State	Published - 1 Dec 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: 23 Feb 2008 → 28 Feb 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	3

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country	United States
City	Santa Fe, NM
Period	23/02/08 → 28/02/08

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10.1109/ISAF.2008.4693773

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Jang, H. W., Baek, S. H., Ortiz, D., Folkman, C. M., Das, R. R., Chu, Y., Zhang, J. X., Vaithyanathan, V., Choudhury, S., Chen, Y. B., Pan, X. Q., Schlom, D. G., Chen, L. Q., Ramesh, R., & Eom, C. B. (2008). Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 [4693773] (IEEE International Symposium on Applications of Ferroelectrics; Vol. 3). https://doi.org/10.1109/ISAF.2008.4693773

Jang, H. W. ; Baek, S. H. ; Ortiz, D. ; Folkman, C. M. ; Das, R. R. ; Chu, Ying-hao ; Zhang, J. X. ; Vaithyanathan, V. ; Choudhury, S. ; Chen, Y. B. ; Pan, X. Q. ; Schlom, D. G. ; Chen, L. Q. ; Ramesh, R. ; Eom, C. B. / Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films. 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. (IEEE International Symposium on Applications of Ferroelectrics).

@inproceedings{eb631e41b8094000a948875239ed3832,

title = "Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO 3 thin films",

abstract = " We report the strain dependence of remanent polarization and coercive field of epitaxial (001) p BiFeO 3 films. Our measurements reveal that the large spontanoues polarization of BiFeO 3 is indeed intrinsic, the remanent polarization of (001) p BiFeO 3 thin films has a strong strain dependence, even stronger than (001) PbTiO 3 films, and the coercive field of BiFeO 3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO 3 membranes allows us to achieve a fatigue-free switching behavior to 10 10 cycles. This experimental result strongly suggests that epitaxial (001) p BiFeO 3 thin films are very promising materials for non-volatile memories and magnetoelectric devices. ",

author = "Jang, {H. W.} and Baek, {S. H.} and D. Ortiz and Folkman, {C. M.} and Das, {R. R.} and Ying-hao Chu and Zhang, {J. X.} and V. Vaithyanathan and S. Choudhury and Chen, {Y. B.} and Pan, {X. Q.} and Schlom, {D. G.} and Chen, {L. Q.} and R. Ramesh and Eom, {C. B.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ISAF.2008.4693773",

language = "English",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "null ; Conference date: 23-02-2008 Through 28-02-2008",

}

Jang, HW, Baek, SH, Ortiz, D, Folkman, CM, Das, RR, Chu, Y, Zhang, JX, Vaithyanathan, V, Choudhury, S, Chen, YB, Pan, XQ, Schlom, DG, Chen, LQ, Ramesh, R & Eom, CB 2008, Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693773, IEEE International Symposium on Applications of Ferroelectrics, vol. 3, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 23/02/08. https://doi.org/10.1109/ISAF.2008.4693773

Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films. / Jang, H. W.; Baek, S. H.; Ortiz, D.; Folkman, C. M.; Das, R. R.; Chu, Ying-hao; Zhang, J. X.; Vaithyanathan, V.; Choudhury, S.; Chen, Y. B.; Pan, X. Q.; Schlom, D. G.; Chen, L. Q.; Ramesh, R.; Eom, C. B.

17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. 4693773 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO 3 thin films

AU - Jang, H. W.

AU - Baek, S. H.

AU - Ortiz, D.

AU - Folkman, C. M.

AU - Das, R. R.

AU - Chu, Ying-hao

AU - Zhang, J. X.

AU - Vaithyanathan, V.

AU - Choudhury, S.

AU - Chen, Y. B.

AU - Pan, X. Q.

AU - Schlom, D. G.

AU - Chen, L. Q.

AU - Ramesh, R.

AU - Eom, C. B.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report the strain dependence of remanent polarization and coercive field of epitaxial (001) p BiFeO 3 films. Our measurements reveal that the large spontanoues polarization of BiFeO 3 is indeed intrinsic, the remanent polarization of (001) p BiFeO 3 thin films has a strong strain dependence, even stronger than (001) PbTiO 3 films, and the coercive field of BiFeO 3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO 3 membranes allows us to achieve a fatigue-free switching behavior to 10 10 cycles. This experimental result strongly suggests that epitaxial (001) p BiFeO 3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

AB - We report the strain dependence of remanent polarization and coercive field of epitaxial (001) p BiFeO 3 films. Our measurements reveal that the large spontanoues polarization of BiFeO 3 is indeed intrinsic, the remanent polarization of (001) p BiFeO 3 thin films has a strong strain dependence, even stronger than (001) PbTiO 3 films, and the coercive field of BiFeO 3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO 3 membranes allows us to achieve a fatigue-free switching behavior to 10 10 cycles. This experimental result strongly suggests that epitaxial (001) p BiFeO 3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

UR - http://www.scopus.com/inward/record.url?scp=58149501653&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2008.4693773

DO - 10.1109/ISAF.2008.4693773

M3 - Conference contribution

AN - SCOPUS:58149501653

SN - 1424427444

SN - 9781424427444

T3 - IEEE International Symposium on Applications of Ferroelectrics

BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -

Jang HW, Baek SH, Ortiz D, Folkman CM, Das RR, Chu Y et al. Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO ₃ thin films. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. 4693773. (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2008.4693773