Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO 3 thin films

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, R. R. Das, Ying-hao Chu, J. X. Zhang, V. Vaithyanathan, S. Choudhury, Y. B. Chen, X. Q. Pan, D. G. Schlom, L. Q. Chen, R. Ramesh, C. B. Eom

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the strain dependence of remanent polarization and coercive field of epitaxial (001) p BiFeO 3 films. Our measurements reveal that the large spontanoues polarization of BiFeO 3 is indeed intrinsic, the remanent polarization of (001) p BiFeO 3 thin films has a strong strain dependence, even stronger than (001) PbTiO 3 films, and the coercive field of BiFeO 3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO 3 membranes allows us to achieve a fatigue-free switching behavior to 10 10 cycles. This experimental result strongly suggests that epitaxial (001) p BiFeO 3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

Original languageEnglish
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs
StatePublished - 1 Dec 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: 23 Feb 200828 Feb 2008

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics
Volume3

Conference

Conference17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period23/02/0828/02/08

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