Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu*, C. H. Chiu, Yuh Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han Wei Yang, Hao-Chung Kuo, Tien-chang Lu, W. Y. Yeh, S. C. Wang

*Corresponding author for this work

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Abstract

A freestanding nanopillar with a diameter of 300 nm and a height of 2 μm is demonstrated by focused ion beam milling. The measured microphotoluminescence (μ-PL) from the embedded InGaNGaN multiple quantum wells shows a blueshift of 68 meV in energy with a broadened full width at half maximum, ∼200 meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement suggests that the strain-relaxed emission region exhibits a higher radiative recombination rate than that of the strained region, indicating potential for realizing high-efficiency nanodevices in the UV/blue wavelength range.

Original languageEnglish
Article number081110
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - 15 Sep 2008

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