Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

C. H. Chiu, Peichen Yu, J. R. Chen, H. H. Yen, C. C. Kao, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, Yuh Renn Wu, Han Wei Yang, W. Y. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ∼200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the asgrown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages139-143
Number of pages5
Edition7
DOIs
StatePublished - 1 Dec 2008
EventState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number7
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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