Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Jenn-Fang Chen*, R. S. Hsiao, Y. P. Chen, J. S. Wang, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We present detailed studies of the onset of strain relaxation in InAsInGaAs quantum dots. We show that the ground-state photoluminescence (PL) emission redshifts with increasing the InAs coverage before relaxation and blueshifts when relaxation occurs. PL spectra of the relaxed samples show two predominant families of dots with very different temperature-dependent efficiency. By comparison we show that the dots emitting at long wavelength are degraded by relaxation while the dots emitting at short wavelength remain coherently strained. Consequently, the PL spectra are dominated by the dots emitting at short wavelength, leading to the observed blueshift. This result suggests that the relaxation does not occur uniformly. In addition, we show that the relaxation occurs in the dot bottom interface.

Original languageEnglish
Article number141911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number14
DOIs
StatePublished - 3 Oct 2005

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