Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu*, Min An Tsai, Ching Hua Chiu, Hao-Chung Kuo, Yuh Renn Wu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

Original languageEnglish
Article number71351Y
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7135
DOIs
StatePublished - 1 Dec 2008
EventOptoelectronic Materials and Devices III - Hangzhou, China
Duration: 27 Oct 200830 Oct 2008

Keywords

  • Focused ion beam
  • InGaN/GaN
  • Nanopillar
  • Strain relaxation

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