Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Jenn-Fang Chen*, R. S. Hsiao, W. D. Huang, Y. H. Wu, Li Chang, J. S. Wang, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The onset of strain relaxation and induced defects in In As0.94 Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots.

Original languageEnglish
Article number233113
JournalApplied Physics Letters
Volume88
Issue number23
DOIs
StatePublished - 5 Jun 2006

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