Strain-induced very low noise RF MOSFETs on flexible plastic substrate

H. L. Kao*, Albert Chin, B. F. Hung, J. M. Lai, C. F. Lee, M. F. Li, G. S. Samudra, C. Zhu, Z. L. Xia, X. Y. Liu, J. F. Kang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations


Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NF min ) and high 12 dB associate gain are measured at 10 GHz of 0.18 μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NF min to only 0.92 dB and comparable well with the 0.13 μm and 90nm nodes MOSFETs.

Original languageEnglish
Article number1469251
Pages (from-to)160-161
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 14 Jun 200514 Jun 2005

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