Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NF min ) and high 12 dB associate gain are measured at 10 GHz of 0.18 μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NF min to only 0.92 dB and comparable well with the 0.13 μm and 90nm nodes MOSFETs.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 2005|
|Event||2005 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 14 Jun 2005 → 14 Jun 2005