Strain-induced channel backscattering modulation in nanoscale CMOSFETs

Hiuig Wei Chen*, Hong Nien Lin, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages62-63
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 24 Apr 200626 Apr 2006

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period24/04/0626/04/06

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  • Cite this

    Chen, H. W., Lin, H. N., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y., & Lee, W. C. (2006). Strain-induced channel backscattering modulation in nanoscale CMOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 62-63). [4016603] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251067