Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization

Nai-Hui Chen; Chien-Hsu Chen; Chien-Ping Lee

doi:10.1016/j.surfcoat.2016.05.019

Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization

Nai-Hui Chen, Chien-Hsu Chen, Chien-Ping Lee

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	92-96
Number of pages	5
Journal	Surface and Coatings Technology
DOIs	https://doi.org/10.1016/j.surfcoat.2016.05.019
State	Published - 25 Nov 2016

Keywords

Diluted magnetic semiconductors; GaMnAs; Ion implantation; Ion beam induced epitaxial crystallization
DILUTED MAGNETIC SEMICONDUCTOR; IMPLANTED GAAS; RAMAN-SCATTERING; MN; IRRADIATION; (GA,MN)AS; DEPOSITION; GA1-XMNXAS

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title = "Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization",

abstract = "In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.",

keywords = "Diluted magnetic semiconductors; GaMnAs; Ion implantation; Ion beam induced epitaxial crystallization, DILUTED MAGNETIC SEMICONDUCTOR; IMPLANTED GAAS; RAMAN-SCATTERING; MN; IRRADIATION; (GA,MN)AS; DEPOSITION; GA1-XMNXAS",

author = "Nai-Hui Chen and Chien-Hsu Chen and Chien-Ping Lee",

year = "2016",

month = nov,

day = "25",

doi = "10.1016/j.surfcoat.2016.05.019",

language = "English",

pages = "92--96",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

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TY - JOUR

T1 - Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization

AU - Chen, Nai-Hui

AU - Chen, Chien-Hsu

AU - Lee, Chien-Ping

PY - 2016/11/25

Y1 - 2016/11/25

N2 - In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.

AB - In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.

KW - Diluted magnetic semiconductors; GaMnAs; Ion implantation; Ion beam induced epitaxial crystallization

KW - DILUTED MAGNETIC SEMICONDUCTOR; IMPLANTED GAAS; RAMAN-SCATTERING; MN; IRRADIATION; (GA,MN)AS; DEPOSITION; GA1-XMNXAS

U2 - 10.1016/j.surfcoat.2016.05.019

DO - 10.1016/j.surfcoat.2016.05.019

M3 - Article

SP - 92

EP - 96

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -