In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.
- Diluted magnetic semiconductors; GaMnAs; Ion implantation; Ion beam induced epitaxial crystallization
- DILUTED MAGNETIC SEMICONDUCTOR; IMPLANTED GAAS; RAMAN-SCATTERING; MN; IRRADIATION; (GA,MN)AS; DEPOSITION; GA1-XMNXAS