Status of GaN-based power switching devices

Masahiro Hikita*, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron.A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm 2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.

Original languageEnglish
Pages (from-to)1257-1262
Number of pages6
JournalMaterials Science Forum
Volume600-603
DOIs
StatePublished - 10 Apr 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 14 Oct 200719 Oct 2007

Keywords

  • Conductivity modulation
  • GaN
  • High power switching
  • Hole injection
  • Normally-off
  • Si substrate

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    Hikita, M., Ueno, H., Matsuo, H., Ueda, T., Uemoto, Y., Inoue, K., Tanaka, T., & Ueda, D. (2009). Status of GaN-based power switching devices. Materials Science Forum, 600-603, 1257-1262. https://doi.org/10.4028/3-908453-11-9.1257