Statistics of grain boundaries in polysilicon

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A nanometer-scale variation of grain boundary locations in gate polysilicon is investigated in detail based on the assumption that the arrangement of grain boundaries obeys Poisson distribution. The statistics of grain boundaries described here reveals a relation between nanoscopic location and the arrangement of grain boundaries, which implies fluctuation in transistor characteristics of 45-nm and beyond MOSFETs.

Original languageEnglish
Pages (from-to)38-44
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume54
Issue number1
DOIs
StatePublished - 1 Jan 2007

Keywords

  • Entropy
  • Fluctuation
  • Grain boundary
  • MOS devices
  • Poisson distribution
  • Polysilicon
  • SRAM
  • Statistics

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