Statistics of grain boundaries in polysilicon

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


A nanometer-scale variation of grain boundary locations in gate polysilicon is investigated in detail based on the assumption that the arrangement of grain boundaries obeys Poisson distribution. The statistics of grain boundaries described here reveals a relation between nanoscopic location and the arrangement of grain boundaries, which implies fluctuation in transistor characteristics of 45-nm and beyond MOSFETs.

Original languageEnglish
Pages (from-to)38-44
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - 1 Jan 2007


  • Entropy
  • Fluctuation
  • Grain boundary
  • MOS devices
  • Poisson distribution
  • Polysilicon
  • SRAM
  • Statistics

Fingerprint Dive into the research topics of 'Statistics of grain boundaries in polysilicon'. Together they form a unique fingerprint.

Cite this