Statistics of grain boundaries in gate poly-Si

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A nanometer-scale variation due to grain boundaries in gate poly-Si is investigated in detail assuming arrangement of grain boundaries obeys the Poisson distribution. Statistics of grain boundaries described here enables us to understand nanoscopic fluctuation in leakage current and threshold voltage shift in MOSFETs. For the first time, these nanoscopic fluctuation and arrangement variation of grain boundaries are related.

Original languageEnglish
Title of host publication2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Pages39-42
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: 1 Sep 20053 Sep 2005

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2005

Conference

Conference2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
CountryJapan
CityTokyo
Period1/09/053/09/05

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