Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen*, Bruce W. McGaughy, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 10 Dec 199513 Dec 1995

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