The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA|
Duration: 10 Dec 1995 → 13 Dec 1995