Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs

Yan Fu Kuo*, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In recent years, low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) has been widely investigated for various applications to system-on-panel (SOP) technology. However, due to the complexity of grain boundary trap properties, the conducting behaviors of various LTPS TFTs are difficult to be analyzed systematically. In this paper, the common and device-dependent thermal effects are studied to understand the conduction mechanism in the LTPS TFTs.

Original languageEnglish
Pages (from-to)1092-1095
Number of pages4
JournalSolid-State Electronics
Volume51
Issue number8
DOIs
StatePublished - 1 Aug 2007

Keywords

  • LTPS TFT
  • Scattering mechanism
  • Temperature dependence
  • Variation

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