Statistical study of RRAM MLC SET variability induced by filament morphology

Chung Wei Hsu, Xin Zheng, Yi Wu, Tuo-Hung Hou, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I coMp ) of 100 μ and larger RESET stopping voltage (V reset ) of-4.5 V for smaller d D and larger do with leaving less residual oxygen vacancies (Vo +2 ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.

Original languageEnglish
Title of host publication2017 International Reliability Physics Symposium, IRPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5A3.1-5A3.5
Number of pages5
ISBN (Electronic)9781509066407
DOIs
StatePublished - 30 May 2017
Event2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
Duration: 2 Apr 20176 Apr 2017

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2017 International Reliability Physics Symposium, IRPS 2017
CountryUnited States
CityMonterey
Period2/04/176/04/17

Keywords

  • Filament Morphology
  • RRAM
  • RTN
  • SET Variability
  • TDDB

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